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MMBT4403LT1

GeneralPurposeTransistors

PNPSilicon •RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

MMBT4403LT1

TRANSISTOR(NPN)

FEATURES •Powerdissipation PCM:0.225W(Tamb=25℃) •PluseDrain ICM:-0.6mA •Reversevoltage V(BR)CBO:-40V •Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

MMBT4403LT1

SwitchingTransistor(PNPSilicon)

SwitchingTransistor PNPSilicon Features •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBT4403LT1

SwitchingTransistor

SwitchingTransistor PNPSilicon

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMBT4403LT1

PNPEPITAXIALPLANARTRANSISTOR

Description TheMMBT4403LT1isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

TGS

Tiger Electronic Co.,Ltd

MMBT4403LT1

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

AVICTEK

Avic Technology

MMBT4403LT1

GeneralPurposeTransistor(PNPSilicon)

GeneralPurposeTransistors PNPSilicon

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

MMBT4403LT1G

SwitchingTransistor(PNPSilicon)

SwitchingTransistor PNPSilicon Features •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBT4403LT1G

SwitchingTransistor

SwitchingTransistor PNPSilicon Features •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBT4403LT1G

SwitchingTransistor

SwitchingTransistor PNPSilicon Features •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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