首页 >LMBD914LT1H>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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High?뭆peedSwitchingDiode Features ●RoHSproductforpackingcodesuffixG ●HalogenfreeproductforpackingcodesuffixH ●MoistureSensitivityLevel1 | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | WILLAS | ||
High-SpeedSwitchingDiode High-SpeedSwitchingDiode | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
High-SpeedSwitchingDiode High-SpeedSwitchingDiode | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
Plastic-EncapsulatedDiodes SOT-23Plastic-EncapsulatedDiodes FEATURES Powerdissipation PD:225mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:75V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
High?뭆peedSwitchingDiode High−SpeedSwitchingDiode Features •Pb−FreePackageisAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
High?뭆peedSwitchingDiode High−SpeedSwitchingDiode Features •Pb−FreePackageisAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GigabitEthernetSwitchEvaluationBoard | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
High-SpeedSwitchingDiode Features •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
High-SpeedSwitchingDiode | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
High-SpeedSwitchingDiode | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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