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MMBD914LT1

High?뭆peedSwitchingDiode

Features ●RoHSproductforpackingcodesuffixG ●HalogenfreeproductforpackingcodesuffixH ●MoistureSensitivityLevel1

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

MMBD914LT1

High-SpeedSwitchingDiode

High-SpeedSwitchingDiode

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

MMBD914LT1

High-SpeedSwitchingDiode

High-SpeedSwitchingDiode

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMBD914LT1

Plastic-EncapsulatedDiodes

SOT-23Plastic-EncapsulatedDiodes FEATURES Powerdissipation PD:225mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:75V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

MMBD914LT1

High?뭆peedSwitchingDiode

High−SpeedSwitchingDiode Features •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBD914LT1G

High?뭆peedSwitchingDiode

High−SpeedSwitchingDiode Features •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBD914LT1G

GigabitEthernetSwitchEvaluationBoard

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

MMBD914LT1G

High-SpeedSwitchingDiode

Features •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBD914LT1G

High-SpeedSwitchingDiode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBD914LT1G

High-SpeedSwitchingDiode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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