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MBD330DWT1

DualSchottkyBarrierDiodes

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBD330DWT1

DualSCHOTTKYBarrierDiodes

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

MBD330DWT1

DualSCHOTTKYBarrierDiodes

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

MBD330DWT1

DualSchottkyBarrierDiodes

Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT−363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmallsix−leadedpackage.TheSOT−3

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBD330DWT1

DualSchottkyBarrierDiodes

DualSchottkyBarrierDiodes Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT–363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmall

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MBD330DWT1

DualSCHOTTKYBarrierDiodes

Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT–363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmallsix–leadedpackage.TheSOT–3

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

MBD330DWT1

DualSchottkyBarrierDiodes

Features ●ExtremelyLowMinorityCarrierLifetime ●VeryLowCapacitance ●LowReverseLeakage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

MBD330DWT1G

DualSchottkyBarrierDiodes

Applicationcircuitdesignsaremovingtowardtheconsolidationof devicecountandintosmallerpackages.ThenewSOT−363packageisa solutionwhichsimplifiescircuitdesign,reducesdevicecount,andreduces boardspacebyputtingtwodiscretedevicesinonesmallsix−leaded package.TheS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBD330DWT1G

DualSchottkyBarrierDiodes

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBD330DWT1G

DualSchottkyBarrierDiodes

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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