首页 >LMB4009M>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Ultra-LowPowerBatteryGasGauge | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Monolithic4AHIghVoltage2-CellLi-IonBatteryCharger | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
HighVoltageHighCurrentControllerforBatteryChargingwithMaximumPowerPointControl | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
HighVoltageHighCurrentControllerforBatteryChargingandPowerManagement | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
HighEfficiency,Multi-ChemistryBatteryCharger | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
HighEfficiency,Multi-ChemistryBatteryCharger | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
HighEfficiency,Multi-ChemistryBatteryCharger | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
UHFtoXBandLow-NoiseAmplifierandOSCApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
RFTransistor3.5V,40mA,fT=25GHz,NPNSingleMCPH4 RFTransistor 3.5V,40mA,fT=25GHz,NPNSingleMCPH4 Features •Low-noiseuse:NF=1.1dBtyp(f=2GHz) •Highcut-offfrequency:fT=25GHztyp(VCE=3V) •Lowoperatingvoltage •Highgain:|S21e|2=17dBtyp(f=2GHz) •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
UHFtoXBandLow-NoiseAmplifierandOSCApplications NPNEpitaxialPlanarSiliconTransistor Features •Low-noiseuse:NF=1.1dBtyp(f=2GHz) •Highcut-offfrequency:fT=25GHztyp(VCE=3V) •Lowoperatingvoltage •Highgain:|S21e|2=17dBtyp(f=2GHz) •Halogenfreecompliance | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO |
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