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LM8364BALMFX20

MicropowerUndervoltageSensingCircuits

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LM8364BALMFX20/NO.A

LM8364MicropowerUndervoltageSensingCircuits

1FEATURES 2•ExtremelyLowQuiescentCurrent:0.65μA,at VIN=2.87V •HighAccuracyThresholdVoltage(±2.5%) •OpenDrainOutput •InputVoltageRange:1Vto6V •SurfaceMountPackage(5-PinSOT-23) •PinforPinCompatiblewithMC33464 APPLICATIONS •LowBatteryDetection •Mi

TI2Texas Instruments

德州仪器美国德州仪器公司

LM8364BALMFX20/NOPB

LM8364MicropowerUndervoltageSensingCircuits

1FEATURES 2•ExtremelyLowQuiescentCurrent:0.65μA,at VIN=2.87V •HighAccuracyThresholdVoltage(±2.5%) •OpenDrainOutput •InputVoltageRange:1Vto6V •SurfaceMountPackage(5-PinSOT-23) •PinforPinCompatiblewithMC33464 APPLICATIONS •LowBatteryDetection •Mi

TI2Texas Instruments

德州仪器美国德州仪器公司

LM8364BALMFX20/NOPB

MicropowerUndervoltageSensingCircuits

TI1Texas Instruments

德州仪器美国德州仪器公司

LM8364BALMFX20SLASHNO.A

LM8364MicropowerUndervoltageSensingCircuits

1FEATURES 2•ExtremelyLowQuiescentCurrent:0.65μA,at VIN=2.87V •HighAccuracyThresholdVoltage(±2.5%) •OpenDrainOutput •InputVoltageRange:1Vto6V •SurfaceMountPackage(5-PinSOT-23) •PinforPinCompatiblewithMC33464 APPLICATIONS •LowBatteryDetection •Mi

TI2Texas Instruments

德州仪器美国德州仪器公司

LM8364BALMFX20SLASHNOPB

LM8364MicropowerUndervoltageSensingCircuits

1FEATURES 2•ExtremelyLowQuiescentCurrent:0.65μA,at VIN=2.87V •HighAccuracyThresholdVoltage(±2.5%) •OpenDrainOutput •InputVoltageRange:1Vto6V •SurfaceMountPackage(5-PinSOT-23) •PinforPinCompatiblewithMC33464 APPLICATIONS •LowBatteryDetection •Mi

TI2Texas Instruments

德州仪器美国德州仪器公司

LM8364BALMFX20SLASHNOPB

MicropowerUndervoltageSensingCircuits

TI1Texas Instruments

德州仪器美国德州仪器公司

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