首页 >LM6511IMX其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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PIRSENSORINTERFACE DESCRIPTION(SeeFigure5) TheLS6511isaCMOSintegratedcircuit,designedfordetectingmotionfromaPIRSensorandinitiatingappropriateresponses. FEATURES: •DirectInterfacewithPIRSensor •Two-StageDifferentialAmplifier •AmplifierGainandBandwidthexternallycontrolled •Tru | LSI LSI Computer Systems | LSI | ||
DirectInterfacewithPIRSensor DESCRIPTION(SeeFigure5) TheLS6511N,LS6512andLS6513areCMOSintegratedcircuitsdesignedfordetectingmotionfromaPIRSensorandinitiatingappropriateresponses. FEATURES: •DirectInterfacewithPIRSensor •Two-StageDifferentialAmplifier •AmplifierGainandBandwidthexternall | LSI LSI Computer Systems | LSI | ||
Low-Cost,RemoteSOTTemperatureSwitches | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
Low-Cost,RemoteSOTTemperatureSwitches | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
Low-CostIndustrialDigitalI/O-30V,BankIsolated | NI National Instruments Inc. | NI | ||
Low-CostIndustrialDigitalI/O-30V,BankIsolated | NI National Instruments Inc. | NI | ||
LASERDIODEINCOAXIALPACKAGEFOR155Mb/sAND622Mb/sAPPLICATIONS | CEL California Eastern Labs | CEL | ||
LASERDIODE1550nmInGaAsPMQW-DFBLASERDIODEFOR1.25Gb/sFTTHP2PANDOC-48IR-2 DESCRIPTION TheNX6511GHisa1550nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPIN-PD. FEATURES •OpticaloutputpowerPO=5.0mW •LowthresholdcurrentIth=10mA •Differentialefficiencyηd=0.35W/A •Wideoperatingtemperatu | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
LASERDIODEINCOAXIALPACKAGEFOR155Mb/sAND622Mb/sAPPLICATIONS | CEL California Eastern Labs | CEL | ||
CWLaserDiodeDriver | DEI Directed Energy, Inc | DEI |
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