LM5109B-Q1中文资料德州仪器数据手册PDF规格书

1 Features

1• Qualified for Automotive Applications

• AEC-Q100 Qualified With the Following Results

– Device Temperature Grade 1 high–

Device HBM ESD Classification Level 1C

– Device CDM ESD Classification Level C4A

• Drives Both a High-Side and Low-Side N-Channel

MOSFET

• 1-A Peak Output Current (1.0-A Sink/1.0-A

Source)

• Independent TTL/CMOS Compatible Inputs

• Bootstrap Supply Voltage to 108-V DC

• Fast Propagation Times (30 ns Typical)

• Drives 1000-pF Load with 15-ns Rise and Fall

Times

• Excellent Propagation Delay Matching (2 ns

Typical)

• Supply Rail Under-Voltage Lockout

• Low Power Consumption

• Thermally-Enhanced WSON-8 Package

2 Applications

• Push-Pull Converters

• Half and Full Bridge Power Converters

• Solid State Motor Drives

• Two Switch Forward Power Converters

3 Description

The LM5109B-Q1 is a cost effective, high voltage

gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous

buck or a half bridge configuration. The floating high–

side driver is capable of working with rail voltages up

to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds.

The robust level shift technology operates at high

speed while consuming low power and providing

clean level transitions from the control input logic to

the high-side gate driver. Under-voltage lockout is

provided on both the low-side and the high-side power rails. The device is available in the thermally

enhanced WSON(8) packages.