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LM358SR

SIGNATURESERIESOperationalAmplifiers

ROHMRohm

罗姆罗姆半导体集团

LM358-SR

1.2MHz,Low-Power36VOpAmps

3PEAK3PEAK INC.

思瑞浦思瑞浦微电子科技(苏州)股份有限公司

LM358ST

LowPowerDualOperationalAmplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedop-ampswhicharedesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

LM358ST

Lowpowerdualoperationalamplifiers

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

LM358ST

SILICONMONNOLITHICINTEGRATEDCIRCUIT

Description TheUniversalStandardfamilyLM358/324,LM2904/2902monolithicICsintegratetwoindependentop-ampsandphasecompensationcapacitorsonasinglechip andfeaturehigh-gain,lowpowerconsumption,andanoperatingvoltagerangeof3[V]to32[V](singlepowersupply.) Features

ROHMRohm

罗姆罗姆半导体集团

LM358ST

Lowpowerdualoperationalamplifiers

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

LM358ST

SIGNATURESERIESOperationalAmplifiers

ROHMRohm

罗姆罗姆半导体集团

LM358ST

Low-powerdualoperationalamplifiers

Features Frequencycompensationimplementedinternally LargeDCvoltagegain:100dB Widebandwidth(unitygain):1.1MHz(temperaturecompensated) Verylowsupplycurrentperchannelessentiallyindependentofsupplyvoltage Lowinputbiascurrent:20nA(temperaturecompensated) Lowinput

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

LM358ST

LowPowerDualOperationalAmplifiers

■Internallyfrequencycompensated ■LargeDCvoltagegain:100dB ■Widebandwidth(unitygain):1.1mHz (temperaturecompensated) ■Verylowsupplycurrent/op(500μA)essentially independentofsupplyvoltage ■Lowinputbiascurrent:20nA (temperaturecompensated) ■Lowinputoffsetvolta

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

LM358TP

LowPowerDualOperationalAmplifiers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

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