LM1503

N-Channel Enhancement Mode Power MOSFET

LMS1503

N-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching

LT1503G

1.5AGLASSPASSIVATEDRECTIFIER

Features GlassPassivatedDieConstruction DiffusedJunction HighCurrentCapabilityandLowForwardVoltageDrop SurgeOverloadRatingto50APeak LowReverseLeakageCurrent PlasticMaterial-ULFlammabilityClassification94V-0

LTR-C1503

IREmitterandDetector

MB1503

LOW-POWERPLLFREQUENCYSYNTHESIZERWITHPOWERSAVEFUNCTION(1.1GHz)

LOW-POWERPLLFREQUENCYSYNTHESIZERWITHPOWERSAVEFUNCTION(1.1GHz) TheFujitsuMB1503isaserialinputphase-lockedloop(PLL)frequencysynthesizerwithapulse-swallowfunction.Astand-bymodeisprovidedtolimitpowerconsumptionduringintermittentoperation. TheMB1503isconfiguredo

MDD1503

SingleN-channelTrenchMOSFET30V,87.5A,4.7m(ohm)

MDD1503RH

SingleN-channelTrenchMOSFET30V,87.5A,4.7m(ohm)

MM1503

VideoSwitch쨌75??driver쨌Y/Cmix

Outline ThisICextendstheseriesofICsforvideo/audiosignalswitching,witha2-input1-outputsinglevideoswitch,videosignal/chromasignal75Ωdriver,andY/Cmixingcircuitinonesmallpackage(SOT-26). Features (1)Lowpowerconsumptionachieved. (2)Lowpowersupplyvolt

MMBD1503

HighConductanceLowLeakageDiode350mW

Features ●LowLeakage ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion ●150°CJunctionTemperature ●HighConductance

MMBD1503

HighConductanceLowLeakageDiode350mW