首页 >LM024Z>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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LCDModuleUserManual | TOPWAYShenzhen TOPWAY Technology Co., Ltd 深圳拓普微深圳市拓普微科技开发有限公司 | TOPWAY | ||
LCDModuleUserManual | TOPWAYShenzhen TOPWAY Technology Co., Ltd 深圳拓普微深圳市拓普微科技开发有限公司 | TOPWAY | ||
LCDModuleUserManual | TOPWAYShenzhen TOPWAY Technology Co., Ltd 深圳拓普微深圳市拓普微科技开发有限公司 | TOPWAY | ||
LCDModuleUserManual | TOPWAYShenzhen TOPWAY Technology Co., Ltd 深圳拓普微深圳市拓普微科技开发有限公司 | TOPWAY | ||
VERTICALCLIPLITE4MMLITEPIPE | VCC Visual Communications Company | VCC | ||
N-Channel60V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •Materialcategorization: Fordefinitionsofcompliancepleasesee APPLICATIONS •DC/DCConverters •DC/ACInverters •MotorDrives | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel | IRF International Rectifier | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel60V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •Materialcategorization: Fordefinitionsofcompliancepleasesee APPLICATIONS •DC/DCConverters •DC/ACInverters •MotorDrives | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel | IRF International Rectifier | IRF |
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