CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

文件：87.2 Kbytes 页数：10 Pages

SHARPSharp Corporation

夏普

CMOS 16K (2K × 8) Static RAM

DESCRIPTION\nThe LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).FEATURES\n• 2,048 × 8 bit organization\n• Access time: 100 ns (MAX.)\n• Power consumption:\n   Oper • 2,048 × 8 bit organization\n• Access time: 100 ns (MAX.)\n• Power consumption:\n   Operating: 220 mW (MAX.)\n   Standby: 5.5 µW (MAX.)\n• Single +5 V power supply\n• Fully-static operation\n• TTL compatible I/O\n• Three-state outputs\n• Wide temperature range available\n   LH5116H: -40 to +85°C\n•;

Sharp

夏普

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

文件：87.2 Kbytes 页数：10 Pages

SHARPSharp Corporation

夏普

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

文件：87.2 Kbytes 页数：10 Pages

SHARPSharp Corporation

夏普

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

文件：87.2 Kbytes 页数：10 Pages

SHARPSharp Corporation

夏普

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

文件：87.2 Kbytes 页数：10 Pages

SHARPSharp Corporation

夏普

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

文件：87.2 Kbytes 页数：10 Pages

SHARPSharp Corporation

夏普

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

文件：87.2 Kbytes 页数：10 Pages

SHARPSharp Corporation

夏普

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

文件：87.2 Kbytes 页数：10 Pages

SHARPSharp Corporation

夏普

16K CMOS STATIC RAM

General Description Features

文件：343.56 Kbytes 页数：14 Pages

SHARPSharp Corporation

夏普