丝印：LGD8209G；Package：DPAK；410 V, 12 A N-Channel Ignition IGBT

Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high

文件：323.36 Kbytes 页数：7 Pages

Littelfuse

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丝印：LGDTA144TCA；Package：SOT-23；Digital Transistor(PNP)

文件：769.69 Kbytes 页数：2 Pages

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丝印：LGDTA144TE；Package：SOT-523；Digital Transistor(PNP)

文件：769.69 Kbytes 页数：2 Pages

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丝印：LGDTA144TKA；Package：SOT-23-3L；Digital Transistor(PNP)

文件：769.69 Kbytes 页数：2 Pages

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丝印：LGDTA144TSA；Package：TO-92S；Digital Transistor(PNP)

文件：769.69 Kbytes 页数：2 Pages

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丝印：LGDTA144TUA；Package：SOT-323；Digital Transistor(PNP)

文件：769.69 Kbytes 页数：2 Pages

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丝印：LGD***；Package：SOT-25；150 mA CMOS Low Iq Low?묭ropout Voltage Regulator

文件：102.4 Kbytes 页数：11 Pages

ONSEMI

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丝印：LGD***；Package：SOT-25；150 mA CMOS Low Iq Low-Dropout Voltage Regulator

文件：103.73 Kbytes 页数：12 Pages

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安森美半导体

丝印：LGD***；Package：SOT-25；150 mA CMOS Low Iq Low-Dropout Voltage Regulator

文件：160.27 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：LGD8209G；Package：DPAK；410 V, 12 A N-Channel Ignition IGBT

Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high

文件：323.36 Kbytes 页数：7 Pages

Littelfuse

力特