LGE3M26170Q丝印代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
LGE3M26170Q	文件：3.36778 Mbytes Page：9 Pages	丝印：LGE3M26170Q；Package：TO-247-4；Silicon Carbide MOSFET Features  3rd Generation SiC MOSFET Technology  High Speed Switching with Low Capacitances  High Blocking Voltage with Low RDS(on)  Optimized package with Separate Driver Source Pin  Easy to parallel and Simple to Drive  RoHS Compliant, Halogen Free Applications  EV Charging  High 文件：3.36778 Mbytes 页数：9 Pages	LUGUANG 鲁光电子	LUGUANG
LGE3M26170Q	文件：3.36778 Mbytes Page：9 Pages	丝印：LGE3M26170Q；Package：TO-247-4；Silicon Carbide MOSFET Features  3rd Generation SiC MOSFET Technology  High Speed Switching with Low Capacitances  High Blocking Voltage with Low RDS(on)  Optimized package with Separate Driver Source Pin  Easy to parallel and Simple to Drive  RoHS Compliant, Halogen Free Applications  EV Charging  High 文件：3.36778 Mbytes 页数：9 Pages	LUGUANG 鲁光电子	LUGUANG

更多LGE3M26170Q供应商更新时间2025-9-21 11:06:00