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ADJ21006

1-pole/2-pole16ApolarizedpowerrelaysVarietyofcontactarrangements

FEATURES 1.Varietyofcontactarrangements Widelineupof1FormC,1FormA,1FormB,2FormC,2FormA,2FormB,1FormA1FormB. 2.Latchingoperation Latchingviaapolarizedmagneticcircuitstructureallowsremoteoperationandlowerenergyconsumption 3.Compactwithhighc

PanasonicPanasonic Semiconductor

松下松下电器

AGN21006

ULTRA-SMALLPACKAGESLIMPOLARIZEDRELAY

FEATURES •Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. •Outstandingsurgeresistance. Surgewithstandbetweenopencontac

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AGN21006

HighSensitivity,with100mWnominaloperatingpower,inacompactandspacesavingcase

FEATURES 1.Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. 2.Highsensitivitysinglesidestable type(Nominaloperatin

PanasonicPanasonic Semiconductor

松下松下电器

AGN21006Z

ULTRA-SMALLPACKAGESLIMPOLARIZEDRELAY

FEATURES •Compactslimbodysavesspace Thankstothesmallsurfaceareaof5.7mm×10.6mm.224inch×.417inchandlowheightof9.0mm.354inch,thepackagingdensitycanbeincreasedtoallowformuchsmallerdesigns. •Outstandingsurgeresistance. Surgewithstandbetweenopencontac

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

AGQ21006

Highcapacity2Amp,FlatandCompactpackageTelephoneswitchboard

FEATURES 1.Highcapacity:2A 2.CompactflatbodysavesspaceWithasmallfootprintof 10.6mm(L)×7.2mm(W).417inch(L)×.283inch(W)forspacesavings, italsohasaveryshortheightof5.2mm.205inch.(StandardPCboardtype.) 3.Highsensitivitysinglesidestabletyp

PanasonicPanasonic Semiconductor

松下松下电器

AGQ21006

ULTRA-SMALLPACKAGEFLATPOLARIZEDRELAY

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

ASX21006

HIGHSENSITIVITYRELAYWITHGUARANTEEDLOWLEVELSWITCHINGCAPACITY

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

LC21006B

INTEGRATEDCIRCUITS

[SANYO] INTEGRATEDCIRCUITS GateArrays(monolithicICs)

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

MV21006

GaAsVaractorDiodesAbruptJunction

Description Microsemi’sGaAsabruptjunctionvaractorsarefabricatedfromepitaxiallayersgrownatMicrosemiusingChemicalVaporDeposition.ThelayersareprocessedusingproprietarytechniquesresultinginahighQfactorandveryrepeatabletuningcurves.Thediodesareavailableinavarie

MicrosemiMicrosemi Corporation

美高森美美高森美公司

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