丝印：LF356M；Package：SOIC(D)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356M；Package：SOIC(D)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356M；Package：SOIC(D)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356M；Package：SOIC(D)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356M；Package：SOIC(D)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356M；Package：SOIC(D)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356M；Package：SOIC(D)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356M；Package：SOIC(D)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356M；Package：SOIC(D)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356M；Package：SOIC(D)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器