LE28FV4001R中文资料三洋数据手册PDF规格书

Overview

The LE28FV4001M, T, R Series are 4 MEG flash memory products that feature a 542488-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. The LE28FV4001M also supports high-speed data rewriting by providing a sector (256 bytes) erase function.

特性 Features

• Highly reliable 2 layer polysilicon CMOS flash EEPROM process

• Read and write operations using a 3.3 V single-voltage power supply

• High-speed access: 200 and 250 ns

• Low power

— Operating (read): 10 mA (maximum)

— Standby: 20 µA (maximum)

• Highly reliable read write

—Number of sector write cycles: 104 cycles

— Data retention: 10 years

• Address and data latches

• Sector erase function: 256 bytes per sector

• Self-timer erase/program

• Byte program time: 35 µs (maximum)

• Write complete detection function: Toggle bit/Data poling

• Hardware and software data protection functions

• Pin assignment conforms to the JEDEC byte-wide EEPROM standard.

• Package

SOP 32-pin (525 mil) plastic package: LE28FV4001M

TSOP 42-pin (10 × 14 mm) plastic package:LE28FV4001T

TSOP 40-pin (10×14 mm)plastic package: LE28FV4001R