LE28CV1001T中文资料三洋数据手册PDF规格书

Overview

The LE28CV1001M, T Series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power, and ease of use. A 128-byte page rewrite function provides rapid data rewriting.

特性 Features

• Highly reliable 2-layer polysilicon CMOS flash EEPROM process

• Read and write operations using a 5 V single-voltage power supply

• Fast access time: 120 and 150 ns

• Low power dissipation

— Operating current (read): 12 mA (maximum)

— Standby current: 15 µA (maximum)

• Highly reliable read/write

—Erase/write cycles: 104/103 cycles

—Data retention time: 10 years

• Address and data latches

• Fast page rewrite operation

— 128 bytes per page

— Byte/page rewrite time: 5 ms (typical)

— Chip rewrite time: 5 s (typical)

• Automatic rewriting using internally generated Vpp

• Rewrite complete detection function

— Toggle bit

— Data polling

• Hardware and software data protection functions

• All inputs and outputs are TTL compatible.

• Pin assignment conforms to the JEDEC byte-wide EEPROM standard.

• Package

SOP 32-pin (525 mil) plastic package:LE28CV1001M

TSOP 32-pin (8 × 20 mm) plastic package:LE28CV1001T