LE25W81QE中文资料Serial Flash Memory, 8 Mb (1024K x 8)数据手册ONSEMI规格书

描述 Description

The LE25W81QE is a serial interface-compatible flash memory device with a 1M x 8-bit configuration. It uses a single 2.6 V power supply for both reading and writing (program and erase functions) and does not require a special power supply. As such, it can support on-board programming. It has three erase functions, each of which corresponds to the size of the memory
area in which the data is to be erased at one time: the small sector (4K bytes) erase function, the sector (64K bytes) erase function, and the chip erase function (for erasing all the data together). The memory space can be efficiently utilized by selecting one of these functions depending on the
application. A page program method is supported for data writing. The page program method of LE25W81QE can program any amount of data from 1 to 256 bytes. This IC incorporates ON Semi’s unique high-speed programming function which enables fast 0.3 ms (typ) page program time. The program time of 1.5 s (typ) when programming 8-Mbit full-memory space makes for fast data writing when the chip erase function is used. While making the most of the features inherent to a serial flash memory device, the LE25W81QE is housed in an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the LE25W81QE has maximally eliminated this speed-related disadvantage by supporting clocks with frequencies up to 50 MHz under SPI bus specifications. All these features make this device ideally suited to storing program codes in applications such as portable information devices and small disk systems, which are required to have increasingly more compact dimensions.

特性 Features

• Read/write operations enabled by single 2.6 V power supply :2.45 to 3.6 V supply voltage range
• 2.6 V single power supply
• Operating frequency : 30 MHz
• High data transfer rate
• Temperature range :–20 to +70°C (Read operation)0 to +70°C (Write operation)
• Fast erase and programming time
• Serial interface : SPI mode 0, mode 3 supported
• High reliability
• Sector size : 4K bytes/small sector, 64K bytes/sector
• Small sector erase, sector erase, chip erase functions
• Page program function (256 bytes / page)
• Block protect function
• Highly reliable read/writeNumber of rewrite times : 100,000 timesSmall sector erase time : 80 ms (typ), 300 ms (max)Sector erase time : 100 ms (typ), 400 ms (max)Chip erase time : 250 ms (typ), 3.0 s (max)Page program time : 0.3 ms/256 bytes (typ), 1 ms/256 bytes (max)
• Status functions : Ready/busy information, protect information
• Data retention period : 20 years

简介

LE25W81QE属于集成电路（IC）的存储器。由制造生产的LE25W81QE存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。