LE25U20AQG数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The LE25U20AQG is a serial interface-compatible flash memory device with a 256K x 8-bit configuration. It uses a single 2.5V power supply. While making the most of the features inherent to a serial flash memory device, the LE25U20AQG is housed in an 8-pin ultra-miniature package. These features make this device ideally suited to storing program codes in applications such as portable information devices, which are required to have increasingly more compact dimensions. Moreover, by using the small sector erase function this product is also suitable for the parameter or the date storage usage with comparatively little rewriting times that becomes a capacity shortage in EEPROM.

特性 Features

• Read / write operations enabled by single 2.5V power supply :2.30 to 3.60V supply voltage range
• Low Voltage Operation
• Operating frequency : 30MHz
• High data transfer rate
• Temperature range : -40 to 85°C
• Fast erase and programming time
• Serial interface : SPI mode 0, mode 3 supported
• High reliability
• Sector size : 4K bytes/small sector, 64K bytes/sector
• Small sector erase, sector erase, chip erase functions
• Page program function (256 bytes / page)
• Block protect function
• Status functions : Ready/busy information, protect information
• Highly reliable read/writeNumber of rewrite times : 100,000 timesSmall sector erase time : 40ms (typ), 150ms (max)Sector erase time : 80ms (typ), 250ms (max)Chip erase time : 250ms (typ), 1.6s (max)Page program time : 4.0ms/256 bytes (typ), 5.0ms/256 bytes (max)
• Data retention period : 20 years
• Package : WDFN8 2x3

应用 Application

• Application that requires re-writable nonvolatile parameter memory.
• Consumer, Wireless, PC peripheral, every products require store nonvolatile memory.

简介

LE25U20AQG属于集成电路（IC）的存储器。由制造生产的LE25U20AQG存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。