LE25S20MB数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The LE25S20MB is a SPI bus flash memory device with a 2M bit (256K x 8-bit) configuration. It uses a single 1.8 V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S20MB is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S20MB also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.

特性 Features

• Read/write operations enabled by single 1.8 V power supply :1.65 to 1.95 V supply voltage range
• 1.8 V low voltage operation
• Operating frequency : 40 MHz
• High data transfer rate
• Temperature range : -40 to 85°C
• Fast erase and programming time
• Serial interface : SPI mode 0, mode 3 supported
• High reliability
• Sector size : 4K bytes/small sector, 64K bytes/sector
• Small sector erase, sector erase, chip erase functions
• Page program function (256 bytes/page)
• Block protect function
• Highly reliable read/writeNumber of rewrite times : 100,000 timesSmall sector erase time : 40 ms (typ), 150 ms (max)Sector erase time : 80 ms (typ), 250 ms (max)Chip erase time : 300 ms (typ), 3.0 s (max)Page program time : 3.0 ms/256 bytes (typ), 3.5 ms/256 bytes (max)
• Status functions : Ready/busy information, protect information
• Data retention period : 20 years

简介

LE25S20MB属于集成电路（IC）的存储器。由制造生产的LE25S20MB存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。