LE25CB643TT-BH数据手册ONSEMI中文资料规格书

描述 Description

The LE25CB643TT-BH is serial peripheral interface EEPROM (Electrically Erasable and Programmable ROM). This device realizes high speed and a high level reliability by incorporating high performance CMOS EEPROM technology. This device is compatible with SPI memory protocol, therefore it is best suited for application that requires re-writable nonvolatile parameter memory. And this device has 32bytes page write function for high speed data re-write.

特性 Features

• Capacity : 64k bits (8k × 8 bits)
• Wide Operation Voltage
• Single supply voltage : 2.7V to 5.5V
• Low power consumption
• Operating temperature : -40ºC to +85ºC
• High Reliability
• Interface : SPI Mode0 and Mode3 correspondence
• Operating clock frequency : 5MHz
• Low Power consumption: Standby : 3μA (max.): Read : 1mA (max.): Write : 3mA (max.)
• Automatic page write mode : 32 Bytes
• Write cycle time : 5ms
• Erase/Write cycles : 106 cycles
• Data Retention : 20 years
• High reliability : Adopts proprietary symmetric memory array configuration (USP6947325)Incorporates a feature to prohibit write operations under low voltage conditions.

应用 Application

• Application that requires re-writable nonvolatile parameter memory.
• Consumer, Wireless, PC peripheral, every products require store nonvolatile memory