Package：28-SSOP（0.209"，5.30mm 宽）；包装：管件 类别：集成电路（IC） 传感器，电容式触控 描述：IC SENSOR TCH PURETOUCH 28SSOP

RENESAS

瑞萨

Package：28-SSOP（0.209"，5.30mm 宽）；包装：管件 类别：集成电路（IC） 传感器，电容式触控 描述：IC SENSOR TCH PURETOUCH 28SSOP

RENESAS

瑞萨

PNP Epitaxial Planar Silicon Transistor Load Switch Applications

Load Switch Applications Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • IECO is gu

文件：246.56 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -20V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • IECO is guaranteed for preventing re

文件：520.909 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Bipolar Transistor -20V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • IECO is guaranteed for preventing re

文件：520.909 Kbytes 页数：6 Pages

ONSEMI

安森美半导体