首页 >LDM4110>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FastSwitchingSurfaceMountDiode Features ◇Smallsurfacemountingtype ◇Highreliability ◇Lowcurrentoperationat250uA Applications ◇Voltagestabilization | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
Ultra-LowPDLFusedTapCoupler | OPLINK OPLINK Communications Inc. | OPLINK | ||
Ultra-LowPDLFusedTapCoupler | OPLINK OPLINK Communications Inc. | OPLINK | ||
1mW14PinDILCooledLaserModules Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
1mW14PinDILCooledLaserModules Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
1mW14PinDILCooledLaserModules Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
1mW14PinDILCooledLaserModules Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
1mW14PinDILCooledLaserModules Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
1mW14PinDILCooledLaserModules Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
1mW14PinDILCooledLaserModules Description LSCX110lasermodulesarehighlyreliablefiberopticlightsourcesoperatinginthe1300nanometerband.TheinternalsemiconductorlasersarebaseduponInGaAsPburiedheterostructure(BH)technologyandfabricatedbytheMetalOrganicVaporPhaseEpitaxy(MOVPE)process,resulting | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP |
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