GaAs Infrared Emitter Arrays

Features • GaAs infrared emitting diode • Leadframe arrays, available from 2 to 10 Emitters per array • Colour: transparent • High reliability • Available in bins • Same package as BPX 80 series • Miniature package Applications • Miniature photointerrupters • Barcode readers • Indus

文件：265.84 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● Same package as BPX 80 series Applications ● Miniature photointerrupters ● Punched tape-readers ● Industrial electronics ● For control and drive circuits

文件：43.73 Kbytes 页数：4 Pages

SIEMENS

西门子

GaAs Infrared Emitter Arrays

• GaAs infrared emitting diode\n• Leadframe arrays, available from 2 to 10\n   Emitters per array\n• Colour: transparent\n• High reliability\n• Available in bins\n• Same package as BPX 80 series\n• Miniature packageApplications\n• Miniature photointerrupters\n• Barcode readers\n• Industrial electron;

ams-OSRAM

艾迈斯欧司朗

SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT NO BASE CONNECTION

Small Outline Optoisolators Darlington Output (No Base Connection) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise

文件：111.05 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

文件：24.89 Kbytes 页数：2 Pages

NTE

Darlington Phototransistor

文件：50.6 Kbytes 页数：2 Pages

PANASONIC

松下