MA2304PNS

2×63W,13.5to26V,Ultra‑LowIdlePower,MERUS™MultilevelSwitchingClass‑DAudioAmplifierwithIntegratedDSPandInductor‑LessOperation

FEATURES MERUS™multilevelswitchingtechnology •5‑levelvoltagemodulationforultra‑lowidlepowerconsumption: 155mW@24PVDDwithouttheneedofcomplex dynamicrail‑trackingsystems •Inductor‑lessapplicationforreducedsystemcostwithout outputpowerlimitations •ReducedEMIem

ME2304

N-Channel30-V(D-S)MOSFET

MSN2304

30V(D-S)N-ChannelEnhancementModePowerMOSFET

MT2304

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

NB2304A

3.3VZeroDelayClockBuffer

NB2304A

3.3VZeroDelayClockBuffer

NCE2304

NCEN-ChannelEnhancementModePowerMOSFET

NCE2304

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

NJ2304

SOT-23Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter ESDprotectionforhighspeeddatalinesto IEC61000-4-2 ESDcontactdischargetypical8KV,max15KV ESDairdischargetypical15KV,max25KV

NTE2304

SiliconNPNTransistorHighCurrent,HighSpeedSwitch(CompltoNTE2314)

Description: TheNTE2304isasiliconNPNtransistorinaTO3Ptypepackage.Typicalapplicationsincluderelaydrivers,high–speedinverters,converters,andothergeneralhigh–currentswitchingapplications. Features: •LowCollector–EmitterSaturationVoltage •WideASOandResist