64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

文件：137.66 Kbytes 页数：9 Pages

SANYO

三洋

64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

文件：137.66 Kbytes 页数：9 Pages

SANYO

三洋

64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

文件：137.66 Kbytes 页数：9 Pages

SANYO

三洋

64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features • Supply v

文件：71.92 Kbytes 页数：11 Pages

SANYO

三洋

64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features • Supply v

文件：71.92 Kbytes 页数：11 Pages

SANYO

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64K (8192 words x 8 bits) SRAM

Overview The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment. Features ■ Supply voltage range: 2.0 to 3.6V • 3V operation: 2.7 to 3.6V • Battery

文件：442.22 Kbytes 页数：10 Pages

SANYO

三洋