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BAS40-06LT1

CommonAnodeSchottkyBarrierDiodes

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. •Ex

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS40-06LT1G

CommonAnodeSchottkyBarrierDiodes

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Feat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS40-06LT1G

CommonAnodeSchottkyCommonAnodeSchottky

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS40-06LT1G

CommonAnodeSchottkyBarrierDiodes

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. •Ex

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS40-06LT1G

CommonAnodeSchottkyBarrierDiodes

TheseSchottkybarrierdiodesaredesignedforhighspeed switchingapplications,circuitprotection,andvoltageclamping. Extremelylowforwardvoltagereducesconductionloss.Miniature surfacemountpackageisexcellentforhandheldandportable applicationswherespaceislimited. Featu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

LBAS40-06LT1

SCHOTTKYBARRIER(DOUBLE)DIODE

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection. Features ●Lowforwardcurrent ●Guardringprotected ●Lowdiodecapacitance. APPLICATIONS ●Ultrahigh-speedswitching ●Voltageclamping ●Protectioncircuits. ●Blockingdiodes.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LBAS40-06LT1G

SCHOTTKYBARRIERDIODE

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Guardringprotected ●Lowdiodecapacitance. APPLICATIONS ●Ultrahigh-speedswitchin

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LBAS40-06LT1G

SchottkyBARRIERDIODE

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Guardringprotected ●Lowdiodecapacitance. APPLICATIONS ●Ultrahigh-speedswitchin

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LBAS40-06LT1G

SCHOTTKYBARRIERDIODELowforwardcurrent

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LBAS40-06LT1G

SCHOTTKYBARRIERDIODE

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Guardringprotected ●Lowdiodecapacitance. ●S-PrefixforAutomotiveandOtherAppl

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

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