High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 • Drivable by TTL, MOS output LB1232 • Contains base current limiting resistors,Zener diodes for level shift • Direct drivable by 24V P MOS LB1233 • Contains base current limiting resistors.

文件：81.5 Kbytes 页数：4 Pages

SANYO

三洋

High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 • Drivable by TTL, MOS output LB1232 • Contains base current limiting resistors,Zener diodes for level shift • Direct drivable by 24V P MOS LB1233 • Contains base current limiting resistors.

文件：81.5 Kbytes 页数：4 Pages

SANYO

三洋

High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 • Drivable by TTL, MOS output LB1232 • Contains base current limiting resistors,Zener diodes for level shift • Direct drivable by 24V P MOS LB1233 • Contains base current limiting resistors.

文件：81.5 Kbytes 页数：4 Pages

SANYO

三洋

LB1233M

Overview The LB1233M is a Darlington transistor array using NPN transistors. It is suitable for applications such as hammer drive, lamp control, relay drive, etc. It also incorporates a spark killer diode for the L load. Features • Designed for high voltage (VCEO ≥50V), large current

文件：51.23 Kbytes 页数：3 Pages

SANYO

三洋

High-Voltage, High- Current Darlington Transistor Array

Featues High-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive LB1231 • Drivable by TTL, MOS output LB1232 • Contains base current limiting resistors,Zener diodes for level shift • Direct drivable by 24V P MOS LB1233 • Contains base current limiting resistors.

文件：81.5 Kbytes 页数：4 Pages

SANYO

三洋

High-Voltage, High-Current Darlington Driver?

Fucntions and Features • 4-channel, high-voltage (65V), high-current (1.5A) Darlington driver. • On-chip spark killer diodes. • Capable of being direct driven with 5V-operated TTL. • NPN input high-active type.

文件：66.14 Kbytes 页数：2 Pages

SANYO

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TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for high voltage, high speed switching circuits, and amplifier applications.

文件：220.81 Kbytes 页数：1 Pages

DCCOM

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TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for high voltage, high speed switching circuits, and amplifier applications.

文件：190.08 Kbytes 页数：1 Pages

DCCOM

道全

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free * High voltage, high speed power switch * Switch regulators * PWM inverter and Motor controls * Solenoid and relay drivers * Deflection circuits

文件：328.8 Kbytes 页数：4 Pages

WEITRON

High-voltage, large current darlington transistor array

Featues\nHigh-voltage (VCEO≥ 50V), large-current (ICmax = 500 mA) drive\nLB1231 • Drivable by TTL, MOS output\nLB1232 • Contains base current limiting resistors,Zener diodes for level shift\n          • Direct drivable by 24V P MOS\nLB1233 • Contains base current limiting resistors.\n          • Dir

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