TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for high voltage, high speed switching circuits, and amplifier applications.

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DCCOM

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TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description\nDesigned for high voltage, high speed switching circuits, and amplifier applications.

DC Components

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Subminiature Photointerrupter

[Letex Technology Corp.] Features • Compact package based on the double-mold method. • High resolution (slit width = 0.4mm). • Gap between emitter and detector is 2.0mm. Applications • Floppy disk drives • Printers • Cameras

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Subminiature Photointerrupter

Features ˙Compact package based on the double-mold method. ˙High resolution (slit width = 0.4mm). ˙Gap between emitter and detector is 2.0mm. Applications ˙Floppy disk drives ˙Printers ˙Cameras

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LETEX

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Plug-in Signal Conditioners M-UNIT

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MSYSTEM

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