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IRFR9014	文件：2.62994 Mbytes Page：5 Pages	P-ChannelEnhancementModeMOSFETl Features *Vos=60V=-13A Rosion100mQ@Ves=10V Rosion110mQ@Vos=-4.5V(TYP)	TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司	TECHPUBLIC
IRFR9014	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014	文件：177.68 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-5.1A) Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9014	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9014	文件：306.39 Kbytes Page：5 Pages	P-CHANNELPOWERMOSFETS FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability	SamsungSamsung Group 三星三星半导体	Samsung
IRFR9014	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014PBF	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014PBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014PBF	文件：1.84209 Mbytes Page：10 Pages	HEXFET짰PowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9014PBF	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TR	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRL	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRL	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9014TRLA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRLPBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRLPBFA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRLPBFA	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRPBF	文件：2.62994 Mbytes Page：5 Pages	P-ChannelEnhancementModeMOSFETl Features *Vos=60V=-13A Rosion100mQ@Ves=10V Rosion110mQ@Vos=-4.5V(TYP)	TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司	TECHPUBLIC
IRFR9014TRPBF	文件：1.02813 Mbytes Page：8 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI

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详细参数

型号：
L9014Q
制造商：
LRC
制造商全称：
Leshan Radio Company
功能描述：
General Purpose Transistors NPN Silicon

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	L9014QLT1G	LRC/乐山	2024+实力库存	SOT-23	30000	只做原厂渠道可追溯货源	询价
深圳市创新迹电子有限公司	L9014QLT1G	LRC/乐山	2021+	SOT-23	9000	原装现货,随时欢迎询价	询价
深圳市明嘉莱科技有限公司	L9014QLT1G	LRC/乐山	24+	SOT-23	156936	明嘉莱只做原装正品现货	询价
深圳市荣泽信电子科技有限公司	L9014QLT1G	LRC	10+		9000	全新原装的现货	询价
深圳市一线半导体有限公司	L9014QLT1G	LRC	07+	SOT-23	450000		询价
深圳市凌旭科技有限公司	L9014QLT1G	LRC	2016+	SOT-23	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市永贝尔科技有限公司	L9014QLT1G	LRC	23+	NA	25060	只做进口原装,终端工厂免费送样	询价
深圳市壹芯创科技有限公司	L9014QLT1G	LRC	22+	SOT-23	5000	原装现货库存.价格优势!!	询价
深圳市华来深电子有限公司	L9014QLT1G	LRC	23+	SOT23	8650	受权代理!全新原装现货特价热卖!	询价
深圳市宇集芯电子有限公司	L9014QLT1G	LRC	24+	SOT-23	90000	一级代理商进口原装现货、假一罚十价格合理	询价

更多L9014Q供应商更新时间2024-6-6 13:40:00

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