SILICON GATE ENHANCEMENT MODE

General Description Silicon LDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. Polyfet process features low feedback and output capacitances, resulting in high Ft transistors w

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POLYFET

High Precision 6MHz, 600 mA Synchronous Step-Down DC-DC Converter for Mobile Applications

文件：971.16 Kbytes 页数：16 Pages

NSC

国半

High Precision 6MHz, 600 mA Synchronous Step-Down DC-DC Converter for Mobile Applications

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TI

德州仪器

LM8801 High Precision 6MHz, 600 mA Synchronous Step-Down DC-DC Converter for Mobile Applications

1FEATURES 2• Over 90% Efficiency at 6 MHz Operation • 600 mA Maximum Load Capability • 6 MHz PWM Fixed Switching Frequency (typ.) • 27 μA (typ.) Quiescent Current in PFM Mode • Wide Input Voltage Range: 2.3V to 5.5V • VOUT = 1.0V to 2.9V with 50 mV steps • ±1.5% DC Output Voltage Pr

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TI

德州仪器