STS6604L

DualEnhancementModeFieldEffectTransistor(NandPChannel)

RODUCTSUMMARY(N-Channel) VDSSIDRDS(ON)(mΩ)Max 204A75@VGS=2.5V 60@VGS=4.5V PRODUCTSUMMARY(P-Channel) VDSSIDRDS(ON)(mΩ)Max -20V-2.5A190@VGS=-2.5V 138@VGS=-4.5V

TPC6604

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPC6604

TransistorSiliconPNPEpitaxialType

UPD6604

MOSINTEGRATEDCIRCUIT

FEATURES •Programmemory(ROM):1002´10bits •Datamemory(RAM):32´4bits •Built-incarriergenerationcircuitforinfraredremotecontrol •9-bitprogrammabletimer:1channel •Commandexecutiontime:8ms(whenoperatingatfOSC=1MHz:RCoscillation) •Stacklevel:1level

UPD6604

4-BITSINGLE-CHIPMICROCONTROLLERFORINFRAREDREMOTECONTROLTRANSMISSION

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

UPD6604GS

4-BITSINGLE-CHIPMICROCONTROLLERFORINFRAREDREMOTECONTROLTRANSMISSION

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

XC6604

0.5VLowInput,1AHighSpeedLDORegulatorwithAdjustableCurrentLimit

XPJR6604PB

MOSFETsSiliconN-channelMOS

Applications •Automotive •SwitchingVoltageRegulators •MotorDrivers •DC-DCConverters Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=0.53mΩ(typ.)(VGS=10V) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (4)Enhancementmode:Vth=2.0to