SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM

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POLYFET

LDMOS SHORTFORM

Silicon LDMOS transistor designed specifically for Broadband RF applications. Suitable for Military

Polyfet RF Devices

RF POWER LDMOS TRANSISTOR

文件：61.37 Kbytes 页数：2 Pages

POLYFET

POWER TRANSISTORS(10A,60V,75W)

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

文件：119.15 Kbytes 页数：2 Pages

MOSPEC

统懋

POWER TRANSISTORS(10A,60V,75W)

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

文件：119.15 Kbytes 页数：2 Pages

MOSPEC

统懋

HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER

DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications. This package has shield effect to cut off ambient light. FEATURES • High isolation voltage (BV = 2 500

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NEC

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