首页 >L19100>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FORAUTOMOTIVE125OPERATIONVOLTAGEDETECTORBUILT-INDELAYCIRCUIT(EXTERNALDELAYTIMESETTING) | SIISeiko Instruments Inc 精工爱普生精工爱普生株式会社 | SII | ||
FORAUTOMOTIVE105째COPERATIONVOLTAGEDETECTORBUILT-INDELAYCIRCUIT(EXTERNALDELAYTIMESETTING) | SIISeiko Instruments Inc 精工爱普生精工爱普生株式会社 | SII | ||
100V,SOT23F,NPNhighgainpowertransistor Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Feat | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100V,SOT23F,NPNhighgainpowertransistor Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Features | Zetex Zetex Semiconductors | Zetex | ||
100VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100V,SOT23F,NPNhighgainpowertransistor Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Feat | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100V,SOT23F,NPNhighgainpowertransistor Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Features | Zetex Zetex Semiconductors | Zetex | ||
100VNPNlowsatmediumpowertransistorinSOT223 Features •BVCEO>100V •IC=5.5AContinuousCollectorCurrent •ICM=10APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
100VNPNlowsatmediumpowertransistorinSOT223 Features •BVCEO>100V •IC=5.5AContinuousCollectorCurrent •ICM=10APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES |
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