丝印：L13；Package：WSON；LP5900 150-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor

1 Features 1• Input Voltage Range, 2.5 V to 5.5 V • Output Voltage Range, 1.5 V to 4.5 V • Stable with 0.47-μF Ceramic Input and Output Capacitors • No Noise Bypass Capacitor Required • Logic Controlled Enable • Thermal-Overload and Short-Circuit Protection • −40°C to 125°C Junction Temper

文件：1.16929 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L13；Package：WSON；LP5900 150-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor

1 Features 1• Input Voltage Range, 2.5 V to 5.5 V • Output Voltage Range, 1.5 V to 4.5 V • Stable with 0.47-μF Ceramic Input and Output Capacitors • No Noise Bypass Capacitor Required • Logic Controlled Enable • Thermal-Overload and Short-Circuit Protection • −40°C to 125°C Junction Temper

文件：1.16929 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L13；Package：WSON；LP5900 150-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor

1 Features 1• Input Voltage Range, 2.5 V to 5.5 V • Output Voltage Range, 1.5 V to 4.5 V • Stable with 0.47-μF Ceramic Input and Output Capacitors • No Noise Bypass Capacitor Required • Logic Controlled Enable • Thermal-Overload and Short-Circuit Protection • −40°C to 125°C Junction Temper

文件：1.16929 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L13；Package：WSON；LP5900 150-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor

1 Features 1• Input Voltage Range, 2.5 V to 5.5 V • Output Voltage Range, 1.5 V to 4.5 V • Stable with 0.47-μF Ceramic Input and Output Capacitors • No Noise Bypass Capacitor Required • Logic Controlled Enable • Thermal-Overload and Short-Circuit Protection • −40°C to 125°C Junction Temper

文件：1.16929 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L13；Package：SOD-123F；Schottky Barrier Rectifiers

文件：462.32 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器