USB Cat.5 KVM Extender

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RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain

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STMICROELECTRONICS

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P-Channel Enhancement Mode Field Effect Transistor

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