Power supply

文件：597.18 Kbytes 页数：3 Pages

PF

倍加福

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain

文件：40.55 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

P-Channel Enhancement Mode Field Effect Transistor

文件：216.47 Kbytes 页数：4 Pages

NIKOSEM

尼克森

P-Channel Logic Level Enhancement

文件：289.05 Kbytes 页数：5 Pages

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