首页 >KUWTN-1733SLASHQ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HC49US12MHzCrystalUnit Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49UScrystalunitforuseinwirelesstelecommunicationsdevices | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
ForElectronic,ElectricalandIndustrialProcessTesting Features ––Extendedmeasurementdistanceofupto100meters ––Viewreadingsofuptofourhandheldmeterssimultaneously ––CompatibleacrossallexistingKeysightU1200serieshandheldmeters ––60,000pointsintervallogging* ––DownloadloggeddatatoaPCviaBluetoothconnection* ––Micro | KEYSIGHTKeysight Technologies 是德科技是德科技（中国）有限公司 | KEYSIGHT | ||
TakeyourexpectationshigherwiththelatestLCRmeters | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
KeysightTechnologiesU1730CSeriesHandheldLCRMeters | KEYSIGHTKeysight Technologies 是德科技是德科技（中国）有限公司 | KEYSIGHT | ||
TakeyourexpectationshigherwiththelatestLCRmeters | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
TakeyourexpectationshigherwiththelatestLCRmeters | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •Lowon-resistance RDS(on)1=10.3mΩTYP.(VGS=–10V,ID=–5.0A) RDS(on)2=14.6mΩTYP.(VGS=–4.5V,ID=–5.0A) RDS(on)3=16.5mΩTYP.(VGS=–4.0V,ID=–5.0A) •LowCiss:Ciss=2600pFTYP. •Smallandsurfacemo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •Lowon-resistance RDS(on)1=10.3mΩTYP.(VGS=–10V,ID=–5.0A) RDS(on)2=14.6mΩTYP.(VGS=–4.5V,ID=–5.0A) RDS(on)3=16.5mΩTYP.(VGS=–4.0V,ID=–5.0A) •LowCiss:Ciss=2600pFTYP. •Smallandsurfacemo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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