Take your expectations higher with the latest LCR meters

文件：523.299 Kbytes 页数：11 Pages

HP

安捷伦

Take your expectations higher with the latest LCR meters

文件：502.78 Kbytes 页数：11 Pages

HP

安捷伦

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A) RDS(on)2 = 14.6 mΩ TYP. (VGS = –4.5 V, ID = –5.0 A) RDS(on)3 = 16.5 mΩ TYP. (VGS = –4.0 V, ID = –5.0 A) • Low Ciss : Ciss =2600 pF TYP. • Small and surface mo

文件：577.41 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A) RDS(on)2 = 14.6 mΩ TYP. (VGS = –4.5 V, ID = –5.0 A) RDS(on)3 = 16.5 mΩ TYP. (VGS = –4.0 V, ID = –5.0 A) • Low Ciss : Ciss =2600 pF TYP. • Small and surface mo

文件：577.41 Kbytes 页数：10 Pages

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瑞萨