首页 >KTK5164S-RTK/P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NCHANNELMOSFIELDEFFECTTRANSISTOR ULTRA-HIGHSPEEDSWITCHINGAPPLICATIONS ANALOGSWITCHAPPLICATIONS FEATURES •2.5GateDrive. •LowThresholdVoltage:Vth=0.5∼1.5V. •HighSpeed. •SmallPackage. •Enhancement-Mode. | KECKEC CORPORATION KEC株式会社 | KEC | ||
CMOS64K(8Kx8)StaticRAM DESCRIPTION TheLH5164A/AHarestaticRAMsorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5164AHisdesignedforwidetemperaturerangefrom-40to+85°C. FEATURES •8,192×8bitorganization •Accesstimes:80/100ns(MAX.) •Low-powerconsu | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM DESCRIPTION TheLH5164A/AHarestaticRAMsorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5164AHisdesignedforwidetemperaturerangefrom-40to+85°C. FEATURES •8,192×8bitorganization •Accesstimes:80/100ns(MAX.) •Low-powerconsu | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM DESCRIPTION TheLH5164ASHisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. Itisdesignedfor2.5to5.5Vlowvoltageoperationandwidetemperaturerangefrom-40to+85°C. FEATURES •8,192×8bitorganization •Accesstime:500ns( | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM DESCRIPTION TheLH5164AVisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •8,192×8bitorganization •Accesstime:200ns(MAX.) •Supplycurrent(MAX.): Operating:248mW 55mW(tRC,tWC=1µs) Standby:5.5 | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM DESCRIPTION TheLH5164AVHisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •8,192×8bitorganization •Accesstime:200ns(MAX.) •Supplycurrent(MAX.): Operating:90mW 29mW(tRC,tWC=1µs) Standby:3. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
100-VInput,1-ASynchronousBuckDC/DCConverterWithUltra-LowIQ | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
100-VInput,1-ASynchronousBuckDC/DCConverterWithUltra-LowIQ | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 |
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