PHOTO-INTERRUPTER

文件：150.47 Kbytes 页数：3 Pages

Kingbright

今台电子

L, S BAND POWER GaAs FET

DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation • High output power P1dB=41.0dBm(TYP.) @f=2.3GHz • High power gain GLP=11.0dB(TYP.) @f=2.3GHz • High power added efficiency P.A.E =40(TY

文件：23 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

L, S BAND POWER GaAs FET

文件：36.78 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

文件：216.7 Kbytes 页数：4 Pages

Mitsubishi

三菱电机