EPITAXIAL PLANAR NPN TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : PC=1.3W(Ta=25°C) • Complementary to KTA1385D/L

文件：400.7 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：737.68 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : PC=1.3W(Ta=25°C) • Complementary to KTA1385D/L

文件：400.7 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 2A APPLICATIONS · Designed for power amplifier applications

文件：323.85 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 2A APPLICATIONS · Designed for power amplifier applications

文件：304.8 Kbytes 页数：3 Pages

ISC

无锡固电