DISCRETE SEMICONDUCTOR Transistors

DISCRETE SEMICONDUCTOR Transistors Bipolar Transistors

文件：246.25 Kbytes 页数：8 Pages

INTEGRAL

Integral Corp.

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for power amplifier applications

文件：188.53 Kbytes 页数：2 Pages

ISC

无锡固电

High Sensitivity, High Density Mounting Type Photocoupler

■ Features 1. High current transfer ratio ( CTR: MIN. 600 at I F= 1mA, V CE = 2V) 2. High isolation voltage between input and output ( Viso: 5000V rms ) 3. Compact dual-in-line package PC815 : 1-channel type PC825 : 2-channel type PC835 : 3-channel type PC845 : 4-channel type 4

文件：112.03 Kbytes 页数：4 Pages

SHARPSharp Corporation

夏普

8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Diffused Junction ● Super-Fast Switching for High Efficiency ● High Current Capability and Low Forward Voltage Drop ● Surge Overload Rating to 100A Peak ● Low Reverse Leakage Current ● Plastic Material: UL Flammability Classification Rating 94V

文件：64.79 Kbytes 页数：2 Pages

DIODES

美台半导体

8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Diffused Junction ● Super-Fast Switching Times for High Efficiency ● High Current Capability and Low Forward Voltage Drop ● Surge Overload Rating to 125A Peak ● Low Reverse Leakage Current ● Plastic Material: UL Flammability Classification Rati

文件：66.77 Kbytes 页数：2 Pages

DIODES

美台半导体