型号：6.0SMAJ8.5A；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glass passivated chip 600W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260°C/10s at terminals. RoHS compliant Features

文件：3.35089 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

型号：AH1913-W-7；Package：SC59；ULTRA HIGH SENSITIVITY DIGITAL OMNIPOLAR HALL-EFFECT SWITCH

Features • Omnipolar Operation (North or South Pole) • Supply Voltage of 1.6V to 5.5V • Micropower Operation • Chopper-Stabilized Design Provides:  Superior Temperature Stability  Minimal Switch Point Drift  Enhanced Immunity to Physical Stress • -40°C to +85°C Operating Temperature •

文件：402.67 Kbytes 页数：10 Pages

DIODES

美台半导体

型号：BU52737GWZ；Package：UCSP35L1；Omnipolar Detection Hall IC (Dual Outputs for both S and N Pole Polarity Detection)

General Description The omnipolar detection Hall IC incorporating a polarity determination circuit enables separate operation (output) of both the South and North poles. Using a magnet and the Hall IC, detection of open and close of the cover are possible in smart phones and tablets, and dete

文件：904.27 Kbytes 页数：17 Pages

ROHM

罗姆

型号：CPDH36V0UA-HF；Package：SOD-523；SMD ESD Protection Diode

Features - Low clamping voltage. - Low Leakage current. - Protects one I/O line. - Working voltages: 3.3V ~ 36V.

文件：95.86 Kbytes 页数：4 Pages

COMCHIP

典琦

型号：EMIF06-USD05F3；Package：FlipChip；6-line EMI filter and ESD protection for SD card, mini-SD card and micro-SD card interfaces

Description The EMIF06-USD05F3 is a 6-line EMI filter dedicated to SD, mini-SD and micro-SD card applications. It provides an efficient attenuation at 900 MHz to reduce or suppress the antenna desense. This filter includes ESD protection circuitry, which prevents damage to the protected device wh

文件：337.77 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

型号：ESD36V52D-A；Package：SOD-523；Transient Voltage Suppressors for ESD Protection

Features 166~266 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one unidirectional I/O line Low clamping voltage Working voltages 3.3V ~ 36V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact): 3.3V ~ 15V IEC61000-4-2 (ESD) ±15kV (air), ±10kV (contact): 18V ~ 36V Ap

文件：2.29886 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

型号：ESD36V52DS-A；Package：SOD-523；Transient Voltage Suppressors for ESD Protection

Features Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 65~265 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one unidirectional I/O line Low Clamping Voltage Working Voltages: 3.3~36V Low leakage current IEC61000-4-2(ESD):±30kV(air),±30kV(contact): 3.3V~15V IEC61000-4-2(ESD

文件：2.22583 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

型号：ESD8.5V12D-C；Package：SOD-123；Transient Voltage Suppressors for ESD Protection

Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/

文件：2.31369 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

型号：NX3008PBK；Package：SOT23；30 V, 230 mA P-channel Trench MOSFET

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD

文件：1.60734 Mbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：P6SMB10A；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：1.00428 Mbytes 页数：4 Pages

SUNMATE

森美特