KT3126A

DISCRETE SEMICONDUCTOR Transistors

DISCRETESEMICONDUCTOR Transistors BipolarTransistors

KTA1204

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING)

HIGHCURRENTSWITCHINGAPPLICATION. FEATURES ●LowCollectorEmitterSaturationVoltage.:VCE(sat)=-0.4V(Max.)(IC=-4A) ●HighCurrentandHighfT:IC=-8A,fT=130MHz. ●ExcellentLinearityofhFE ●HighSpeedSwitchingTime.:fT=20nS(Typ.) ●ComplementarytoKTC1804D/L APPLICATION

KTA1204D

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING)

HIGHCURRENTSWITCHINGAPPLICATION. FEATURES ●LowCollectorEmitterSaturationVoltage.:VCE(sat)=-0.4V(Max.)(IC=-4A) ●HighCurrentandHighfT:IC=-8A,fT=130MHz. ●ExcellentLinearityofhFE ●HighSpeedSwitchingTime.:fT=20nS(Typ.) ●ComplementarytoKTC1804D/L APPLICATION

KTA1225D

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGHVOLTAGEAPPLICATION. FEATURES •HighTransitionFrequency:fT=100MHz(Typ.). •ComplementarytoKTC2983D/L

KTA1225L

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGHVOLTAGEAPPLICATION. FEATURES •HighTransitionFrequency:fT=100MHz(Typ.). •ComplementarytoKTC2983D/L

KTA1241

EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)

KTA1241

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●LowCollectorSaturationVoltage ●HighPowerDissipation

KTA1242

EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)

STROBOFLASHAPPLICATION. HIGHCURRENTAPPLICATION. FEATURES •hFE=100320(VCE=-2V,IC=-0.5A). •LowCollectorSaturationVoltage.:VCE(sat)=-0.5V(IC=-3A,IB=-75mA).

KTA1242D

EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)

STROBOFLASHAPPLICATION. HIGHCURRENTAPPLICATION. FEATURES •hFE=100320(VCE=-2V,IC=-0.5A). •LowCollectorSaturationVoltage.:VCE(sat)=-0.5V(IC=-3A,IB=-75mA).

KTA1242L

EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)

STROBOFLASHAPPLICATION. HIGHCURRENTAPPLICATION. FEATURES •hFE=100320(VCE=-2V,IC=-0.5A). •LowCollectorSaturationVoltage.:VCE(sat)=-0.5V(IC=-3A,IB=-75mA).

KTA1243

EPITAXIAL PLANAR PNP TRANSISTOR (CAMERA STROBO FLASH, HIGH CURRENT)

STROBOFLASHAPPLICATION. HIGHCURRENTAPPLICATION. FEATURES •hFE=100ᴕ320(VCE=-2V,IC=-0.5A). •hFE=70(Min.)(VCE=-2V,IC=-4A). •LowCollectorSaturationVoltage.:VCE(sat)=-0.5V(IC=-3A,IB=-75mA).

KTA1266

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity :hFE(2)=80(Typ.)atVCE=-6V,IC=-150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). •LowNoise:NF=1dB(Typ.).atf=1kHz. •ComplementarytoKTC3198.

KTA1266

PNP Plastic-Encapsulate Transistor

PNPPlastic-EncapsulateTransistor P/bLead(Pb)-Free FEATURES: •ExcellenthFELinearity •Lownoise

KTA1266

TO-92 Plastic-Encapsulate Transistors (PNP)

TRANSISTOR(PNP) FEATURES ●ExcellenthFELinearity ●LowNoise ●ComplementarytoKTC3198

KTA1266

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●ExcellenthFELinearity ●LowNoise ●ComplementarytoKTC3198

KTA1266

PNP Plastic Encapsulated Transistor

FEATURE ●ExcellenthFELinearity ●LowNoise ●ComplementarytoKTC3198

KTA1266

TRANSISTOR (PNP)

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KTA1266

TO-92 Plastic-Encapsulate Transistors

FEATURES ExcellenthFELinearity LowNoise ComplementarytoKTC3198

KTA1266

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features ExcellenthFElinearity,lownoise,complementarypairwithKTC3198. Applications Generalpurposeandswitchingapplication.

KTA1266A

SEMICONDUCTOR TECHNICAL DATA

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity :hFE(2)=80(Typ.)atVCE=-6V,IC=-150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). •LowNoise:NF=1dB(Typ.).atf=1kHz. •ComplementarytoKTC3198A.