KT3116A

DISCRETE SEMICONDUCTOR Transistors

DISCRETESEMICONDUCTOR Transistors BipolarTransistors

KT3117A

DISCRETE SEMICONDUCTOR Transistors

DISCRETESEMICONDUCTOR Transistors BipolarTransistors

KT8117A

DISCRETE SEMICONDUCTOR Transistors

DISCRETESEMICONDUCTOR Transistors BipolarTransistors

KTA1136

IEEE 802.3af PoE PD with Integrated DC-DC Controller and 13W Power FET

Features •ComplianttoIEEE®Std.802.3af-2003 •SupportsType1operationforIEEE®802.3at- 2009andIEEE®802.3bt-2018 •IntegratedDC-DCControllerwithrobust150V, 0.7Ωtyp.supportingbothisolatedandnonisolated applications •LowRDS_ONHot-SwapFET,0.49Ωtyp. •Adjustablesw

KTA1136EUAE-TR

IEEE 802.3af PoE PD with Integrated DC-DC Controller and 13W Power FET

Features •ComplianttoIEEE®Std.802.3af-2003 •SupportsType1operationforIEEE®802.3at- 2009andIEEE®802.3bt-2018 •IntegratedDC-DCControllerwithrobust150V, 0.7Ωtyp.supportingbothisolatedandnonisolated applications •LowRDS_ONHot-SwapFET,0.49Ωtyp. •Adjustablesw

KTA1137A

IEEE 802.3at PoE PD with Integrated DC-DC Controller

Features •FullysupportsbothIEEE®Std.802.3af-2005 andIEEE®Std.802.3at-2009 •“2-Event”classificationfor802.3athigher powerPDs •RobustType2PSEdetectorwithproprietary digitalfilteringlinenoiseeliminatingfalse positives •IEC61000-4-2/3/4/5/6requirementsforEMC

KTA1137AEUAB-TR

IEEE 802.3at PoE PD with Integrated DC-DC Controller

Features •FullysupportsbothIEEE®Std.802.3af-2005 andIEEE®Std.802.3at-2009 •“2-Event”classificationfor802.3athigher powerPDs •RobustType2PSEdetectorwithproprietary digitalfilteringlinenoiseeliminatingfalse positives •IEC61000-4-2/3/4/5/6requirementsforEMC

KTB1100

15W Flyback Regulator with Digital Isolator Integrated Feedback

Features •WideVINRange:7Vto100V •Integrated1.5A,150VPowerMOSFETSwitch •430mΩ(typ.)on-resistanceofMOSFETSwitch •IntegratedFeedbackandDigitalIsolator •InternalStartupRegulator •±1.5FeedbackVoltageReference •3kV-rmsIsolation •FrequencyAdjustablefrom100kHz

KTB1100EYAA-TE

15W Flyback Regulator with Digital Isolator Integrated Feedback

Features •WideVINRange:7Vto100V •Integrated1.5A,150VPowerMOSFETSwitch •430mΩ(typ.)on-resistanceofMOSFETSwitch •IntegratedFeedbackandDigitalIsolator •InternalStartupRegulator •±1.5FeedbackVoltageReference •3kV-rmsIsolation •FrequencyAdjustablefrom100kHz

KTB1124

EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY LAMP DRIVER, ELECTRICAL EQUIPMENT)

VOLTAGEREGULATORS,RELAYDRIVERS LAMPDRIVERS,ELECTRICALEQUIPMENT FEATURES •AdoptionofMBITprocesses. •Lowcollector-to-emittersaturationvoltage. •Fastswitchingspeed. •LargecurrentcapacityandwideASO. •ComplementarytoKTD1624.

KTB1124

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features AdoptionofMBITprocesses,lowcollector-to-emittersaturationvoltage,fastswitchingSpeed,LargecurrentcapacityandwideASO,ComplementarytoKTD1624. Applications Voltageregulators,relaydriverslampdri

KTB1124

Medium power transistor(-60V,-3A)

FEATURES ComplementarytheKTD1624 =-3A/-0.6A). LowVCE(SAT)=-0.5V(Typ.) IC/IB APPLICATIONS Epitaxialplanartype. PNPsilicontransistor.

KTB1151

EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT FEATURES •HighPowerDissipation:Pc=1.5W(Ta=25°C) •ComplementarytoKTD1691

KTC1170

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT)

HIGH-DEFINITIONCRTDISPLAY. VIDEOOUTPUTAPPLICATION. FEATURES •HighVoltage:VCEO=200V. •highTransitionFrequency:fT=150MHz(Typ.) •LowCollectorOutputCapacitance:Cob=1.7pF(Typ.)

KTD112

36V/24V/19V High Efficiency Step-Up LED Driver with PWM Control

Features Wideoutputrange:upto10seriesLEDs Integrated40Vhighcurrentswitch(800mA limit) HighefficiencyPWMconverter(upto90) Low200mVfeedbackvoltage Highaccuracyacrossfullloadrange VINrange:2.7Vto5.5V LEDopen-circuit(OVP)protection −KTD2531:3

KTD1145

EPITAXIAL PLANAR NPN TRANSISTOR (RELAY DRIVE, HAMMER DIRVE, LAMP DRIVE, STROBO,DC-DC CONVERTER, MOTOR DRIVE)

RELAYDRIVE,HAMMERDIRVE,LAMPDRIVE. STROBO,DC-DCCONVERTER,MOTORDRIVE. FEATURES •LowSaturationVoltage.:VCE(sat)=0.5V(Max.)(IC=3A,IB=60mA). •HighCollectorCurrent.:IC=5A,ICP(PeakCurrent)=8A. •WideASO.

KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO)

HIGHCURRENTAPPLICATION CAMERASTROBO(ForElectronicFlashUnit) FEATURES •LowVCE(SAT). •HighPerformanceatLowSupplyVoltage.

KTD1146

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES •LowVCE(sat). •HighPerformanceatLowSupplyVoltage.

KTD117

36V/24V/19V High Efficiency Step-Up LED Driver with PWM Control

Features Wideoutputrange:upto10seriesLEDs Integrated40Vhighcurrentswitch(800mA limit) HighefficiencyPWMconverter(upto90) Low200mVfeedbackvoltage Highaccuracyacrossfullloadrange VINrange:2.7Vto5.5V LEDopen-circuit(OVP)protection −KTD2531:3

KTO111

THERMOSTAT SWITCH

>SafewiringwithPush-Inconnection terminal >Fasterandtool-freewiring >Improvedairintakesforventilation >Easyadjustabilityofswitch temperaturesetting >foruseinupto5,000maltitude