KT110

Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package

Features •TemperaturedependentResistorwithPositiveTemperatureCoefficient •Miniatureplasticpackageforverysmallthermaltimeconstants •Fastresponse •Highreliabilityduetomultilayergoldcontacts •n-conductingsiliconcrystal •Polarityindependentduetosymmetricalconstr

KT110

Silicon Temperature Sensors

Features •Temperaturedependentresistorwithpositivetemperaturecoefficient •Temperaturerange–50°Cto+150°C(–60Fto300F) •AvailableinSMDorleadedorcustomizedpackages •Linearoutput •Excellentlongtermstability •Polarityindependentduetosymmetricalc

KT210

Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package

Features •TemperaturedependentResistorwithPositiveTemperatureCoefficient •Miniatureplasticpackageforverysmallthermaltimeconstants •Fastresponse •Highreliabilityduetomultilayergoldcontacts •n-conductingsiliconcrystal •Polarityindependentduetosymmetricalconstr

KT210

Silicon Temperature Sensors

Features •Temperaturedependentresistorwithpositivetemperaturecoefficient •Temperaturerange–50°Cto+150°C(–60Fto300F) •AvailableinSMDorleadedorcustomizedpackages •Linearoutput •Excellentlongtermstability •Polarityindependentduetosymmetricalc

KT3102AM

DISCRETE SEMICONDUCTOR Transistors

DISCRETESEMICONDUCTOR Transistors BipolarTransistors

KT3107A

DISCRETE SEMICONDUCTOR Transistors

DISCRETESEMICONDUCTOR Transistors BipolarTransistors

KTA1001

EPITAXIAL PLANAR PNP TRANSISTOR (CAMERA STROBO FLASH, HIGH CURRENT)

CAMERASTROBOFLASHAPPLICATION. HIGHCURRENTAPPLICATION. FEATURES •hFE=100~320(VCE=-2V,IC=-0.5A). •hFE=70(Min.)(VCE=-2V,IC=-3A). •LowCollectorSaturationVoltage. :VCE(sat)=-0.5V(Max.)(IC=-3A,IB=-75mA). •HighPowerDissipation. :PC=1W(Tc=25°C),PC=0.5W(

KTA1021

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity. :hFE(2)=25(Min.)atVCE=-6V,IC=-400mA •1WattAmplifierApplication. •ComplementarytoKTC1020.

KTA1023

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGHVOLTAGEAPPLICATION. FEATURE •ComplementarytoKTC1027.

KTA1023

Silicon PNP transistor in a TO-92LM Plastic Package.

Descriptions SiliconPNPtransistorinaTO-92LMPlasticPackage. Features ComplementarypairwithKTC1027. Applications Highvoltageapplication.

KTA1023

PNP Plastic Encapsulated Transistor

FEATURE •LowcollectortoemittersaturationvoltageVCE(sat). •Audiopoweramplifier •HighCurrent

KTA1023

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●ComplementarytoKTC1027

KTA1023-O

PNP Plastic Encapsulated Transistor

FEATURE •LowcollectortoemittersaturationvoltageVCE(sat). •Audiopoweramplifier •HighCurrent

KTA1023-Y

PNP Plastic Encapsulated Transistor

FEATURE •LowcollectortoemittersaturationvoltageVCE(sat). •Audiopoweramplifier •HighCurrent

KTA1024

TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE)

HIGHVOLTAGEAPPLICATION. FEATURES •HighVoltage:VCEO=-150V. •LowOutputCapacitance:Cob=5.0pF(Max.). •HighTransitionFrequency:fT=120MHz(Typ.). •ComplementarytoKTC3206.

KTA1024

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●HighVoltage:VCEO=-150V. ●LowOutputCapacitance:Cob=5.0pF(Max.). ●HighTransitionfrequency:fT=120MHz(Typ.). ●ComplementarytoKTC3206.

KTA1036

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •LowCollectorSaturationVoltage:VCE(sat)=-1.0V(Max.)atIC=-2A,IB=-0.2A. •ComplementarytoKTC2016.

KTA1038

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •HighBreakdownVoltage:VCEO=-100V. •LowCollector-EmitterSaturationVoltage.:VCE(sat)=-2.0V(Max.) •ComplementarytoKTC2018.

KTA1040

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, DPAK FOR SVRFACE MOUNT)

GENERALPURPOSEAPPLICATION. DPAKFORSVRFACEMOUNTAPPLICATIONS. FEATURES •LowCollectorSaturationVoltage :VCE(sat)=-1.0V(Max.)atIC=-2A,IB=-0.2A. •StraightLead(IPAK,LSuffix) •ComplementarytoKTC2020D/L.

KTA1040D

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, DPAK FOR SVRFACE MOUNT)

GENERALPURPOSEAPPLICATION. DPAKFORSVRFACEMOUNTAPPLICATIONS. FEATURES •LowCollectorSaturationVoltage :VCE(sat)=-1.0V(Max.)atIC=-2A,IB=-0.2A. •StraightLead(IPAK,LSuffix) •ComplementarytoKTC2020D/L.