Feature

Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to KSE210

文件：42.91 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

Feature

ONSEMI

安森美半导体

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 25V 5A TO126-3

ONSEMI

安森美半导体

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 200A • VCEX Collector-emitter voltage 600V • hFE DC current gain 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

文件：71.73 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current 200A • VCEX Collector-emitter voltage 350V • hFE DC current gain 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart

文件：72.75 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 200A • IF (AV) Average forward current 200A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • VDRM Repetitive peak off-state voltage 400/800/1200/1600V • MIX DOUBLE A

文件：62.27 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机