KSB1366G

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 3A TO220F-3

KSB1366GTU

LOW FREQUENCY POWER AMPLIFIER

KSB1366GTU

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 3A TO220F-3

KTB1366

TO-220-3LPlastic-EncapsulateTransistors

FEATURES LowCollectorSaturationVoltage ComplementarytoKTD2058

KTB1366

TRIPLEDIFFUSEDPNPTRANSISTOR(GENERALPURPOSE)

GENERALPURPOSEAPPLICATION. FEATURES •LowCollectorSaturationVoltage :VCE(sat)=-1.0V(Max.)atIC=-2A,IB=-0.2A. •CollectorPowerDissipation :PC=25W(Tc=25ᴱ) •ComplementarytoKTD2058.

KTB1366

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

KTB1366

SiliconPNPtransistorinaTO-220FPlasticPackage.

Descriptions SiliconPNPtransistorinaTO-220FPlasticPackage. Features Lowsaturationvoltage,complementarytoKTD2058. Applications Generalpurposeamplifier.

KTB1366

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) •CollectorPowerDissipation- :PC=25W@TC=25℃ •LowCollectorSaturationVoltage- :VCE(sat)=-1.0V(Max)@(IC=-2A,IB=-0.2A) •ComplementtoTypeKTD2058 APPLICATIONS •Designedforgeneralpurposeap

KTB1366

TO-220-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LowCollectorSaturationVoltage ●ComplementarytoKTD2058

LT1366

DualandQuadPrecisionRail-to-RailInputandOutputOpAmps