PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

文件：158.69 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Package：TO-225AA，TO-126-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 300V 0.1A TO126-3

ONSEMI

安森美半导体

PNP Epitaxial Silicon Transistor

Features • High Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SC3503/KSC3503 Applications • Audio, Voltage Amplifi

文件：158.69 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.5V(Max) @IC= 0.5A APPLICATIONS · Audio Amplifiers · Drivers Utilizing Complementary or Quasi Complementary Circuits

文件：251.58 Kbytes 页数：2 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DIFFINITION CRT DISPLAY VIDEO OUTPUT)

HIGH-DEFINITION CRT DISPLAY, VIDEO OUTPUT APPLICATIONS. FEATURES • High breakdown voltage : VCEO 300V. • Small reverse transfer capacitance and excellent high frequency characteristic. : Cre=2.3pF (VCB=30V, f=1MHz) • Complementary KTC3503.

文件：398.43 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司